Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

The silicon single crystals for semiconductor application are usually grown by the Czochralski (CZ) method. In this paper, we studied a 300 mm crystal with cusp magnetic field to be used an insulated gate bipolar transistor (IGBT). Different positions of zero-Gauss plane (ZGP) under were simulated and compared numerical analysis. We investigated three factors that affected oxygen concentration in crystal, including (1) melt convection, (2) flow velocity near quartz crucible wall, (3) diffusion boundary layer. also shape solid/liquid interface at same time. simulation results show change ZGP (CMF) strongly affects convection melt, which leads difference thickness layer wall crucible. relationship ZGP, way, determined how reduce diffusing into finally crystal. After obtained, pulled configurations. experimental data content interfaces consistent results.